To announce the Capital Reduction due
to Cancellation of Restricted Shares
Date of events
2022/03/23
To which item it meets
paragraph 11
Statement
1.Date of the board of directors resolution:2022/03/23
2.Reason for capital reduction:Based on employee restricted share plan,
the restricted shares will be forfeited due to the resignation
of the granted employee. IET will cancel the restricted shares
and reduce the capital accordingly
3.Amount of capital reduction:NTD 18,000.
4.Cancelled shares:1,800 shares
5.Capital reduction ratio:0.005%
6.Share capital after capital reduction:NTD 365,127,430
7.Scheduled date of the shareholders' meeting:NA
8.Estimated no.of TPEx-listed common shares after issuance
of new shares upon capital reduction:NA
9.Estimated ratio of TPEx-listed common shares after issuance
of new shares upon capital reduction to outstanding common
shares:NA
10.Please explain any countermeasures for lower circulation
in shareholding if the aforesaid estimated no.of TPEx-listed
common shares upon capital reduction does not reach 5 million
and the ratio does not reach 25%:NA
11.Record date of capital reduction:2022/03/24
12.Any other matters that need to be specified:The total number of
issued shares of the company as of 2022/03/23 is 36,514,543. After
cancelling 1,800 Restricted shares, the total number of issued shares
will be 36,512,743. The record date of the capital reduction is
2022/03/24.
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IntelliEPI Inc. (Cayman) published this content on 23 March 2022 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 23 March 2022 06:43:04 UTC.
IntelliEPI Inc. (Cayman) is a Cayman Islands-based holding company of Intelligent Epitaxy Technology, Inc. The Company supplies epitaxy-based compound semiconductor EPI-wafers to the electronics and optoelectronics industries. It provides customers with a variety of electronics and optoelectronics EPI structures grown on Gallium Arsenide (GaAs) and Indium Phosphide (InP). Its GaAs based products include PHEMT (AlAs, InGaP Etch Stop) and MHEMT. Its InP based products include HBT (C-doped,Be-doped, GaAsSb), HEMT, RTT, and RTD. Its Sb based products include Type II SLS Photodetectors, GaAsSb-base InP HBT, and EPI-ready GaSb Substrates. Its opto-electronics products include Avalanche Photo Diode (APD), Lasers (750 nm to 1100 nm), VCSEL, PIN (GaAs, InP), QWIP, Modulators, and Quantum Cascade Lasers. It utilizes its real time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of EPI-wafers on GaAs and InP substrates.