- Contributing to downsizing the Raman amplifier unit through the development of pump lasers with smaller space requirements -
- Developed a dual port pump laser for Raman amplifiers that has two optical output ports in the existing 14 pin butterfly package
- Contributing to reducing the Raman amplifier and overall system size through a high output pump laser with small space requirements
Background
As data transmission speed increases, the transmission distance decreases due to degradation of the OSNR (note 1) on the signal receiving side. In particular, when existing communication systems are used at faster transmission speeds, the role of the Raman amplifier, which can amplify optical output power without attenuation of the signal light quality, will become more important. Also, because the bandwidth of the signal expands as a result of high-speed transmission, it is necessary to extend the bandwidth in order to enable high volume transmission. Thus, Raman amplifiers need to have high flexibility to amplify the light source at a discretionary range based on the selection of the pump laser wavelength. On the other hand, with consideration for the expansion into the S-, C-, L-band in the future, the number of pump lasers used will increase, so it will be more important for them to have small size platform, high output power and low power consumption.
Details
In
The module concept is shown in Fig. 1. Two different semiconductor laser chips are equipped in a 14 pin butterfly package, and the light is coupled in the optical fiber using optical coupling technology.
In the operating current-output power curve (laser temperature of 35°C, Fig. 2) of a prototype equipped with 500mW chips from the leading FOL1439R Series, the horizontal axis shows total operating current by both ports and the vertical axis shows total fiber output of both ports. As a result, it was confirmed that an output of 1W, which is the combined output of the two 500mW FOL1439R Series pump lasers, was achieved from a single dual port pump laser. Also, total operating current at a combined output of 1W (laser temperature of 35°C and case temperature of 70°C) was 15W (Fig. 3). This is equivalent to 7.5W per port, which is roughly the same power consumption as the 500mW FOL1439R Series pump laser. Going forward, with the aim of achieving higher output and lower power consumption, we will work to further enhance the performance of this pump laser through the development of laser chips with even higher output and lower power consumption.
The newly developed dual port pump laser for Raman amplifiers (patented) uses our high accuracy fiber coupling technology and optical semiconductor processing technology using InP (note 2) semiconductor materials developed over the past 25 years, as well as the application of our unique low loss, high efficiency semiconductor laser chip structure. The small size of the newly developed high output pump laser will make it possible to downsize the Raman amplifier unit. This downsizing will also lead to the use of fewer components, thus contributing to smaller overall system size.
Product samples will begin shipping from
An oral presentation for this product will be given on the first day of ECOC2023 scheduled to be held in
The current development was conducted and achieved as part of the
Going forward, we will continue to develop high output, low power consumption laser chip technology and contribute to accelerated reductions in module power consumption and the establishment of environmentally-friendly networks.
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
(note 2)InP (Indium Phosphide): A III-V compound semiconductor that is used for the manufacture of laser diode chips and high speed transistors
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