Soitec and Tokai Carbon have entered into a strategic partnership for the development and supply of polycrystalline silicon carbide substrates specifically designed for Soitec SmartSiCTM wafers. Silicon carbide is a disruptive compound semiconductor and SmartSiCTM engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications by delivering superior manufacturing and cost efficiencies with an improved environmental footprint. Under this partnership, which will see Tokai Carbon supply 150mm and 200mm poly-SiC wafers to Soitec, the two companies are harnessing their advanced R&D capabilities to enhance the SmartSiCTM ecosystem.

Tokai Carbon?s advanced technology and manufacturing capacity in polycrystalline silicon carbide (polySiC) combined with the right to use Soitec specifications for polySiC coarse wafers compliant with Soitec SmartSiCTM is expected to make a strategic contribution to the global ramp-up of SmartSiCTM wafer production.