The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and Soitec (Euronext Paris) have announced a research collaboration to develop next-generation silicon carbide (SiC) semiconductor devices to power electric vehicles and advanced high-voltage electronic devices. Under the collaboration, the parties will leverage Soitec's proprietary technologies such as Smart Cut and IME's pilot production line to create 200 mm diameter SiC semiconductors substrates. The joint research will contribute towards developing a holistic SiC ecosystem and boosts semiconductor manufacturing capabilities in Singapore and the region.
The research collaboration is planned to run until mid-2024, and aims to achieve the following outcomes: Develop SiC epitaxy and metaloxidesemiconductor field-effect transistor (MOSFET) fabrication processes for Smart Cut SiC substrates to produce higher quality microchip transistors with less defects and enhanced yield during the manufacturing process. Establish a benchmark for SiC power MOSFET devices fabricated on Smart Cut SiC substrates and demonstrate the advantages of the process with conventional bulk substrates. A*STAR's IME has capabilities in Heterogeneous Integration, System-in-Package, Sensor, Actuators and Microsystems, RF & mmWave, SiC/GaN-on-SiC Power Electronics, and MedTech.
The 8-inch SiC pilot line it is establishing aims to validate 8-inch manufacturing processes and tools on a pilot line scale before a transition can be made to 8-inch high-volume manufacturing. A dual purpose of this programme is to perform applied R&D on innovative SiC MOSFET processes and materials like Soitec's Smart Cut SiC substrates to pre-position the industry for next-generation SiC manufacturing.