Achieved 800mW output with a pump laser for C-band Raman amplifiers
- Started sample shipments of the FRL1441 Series pump laser with an optical output of 700mW -
*Achieved 800mW output at a low power consumption of approximately 16W with a pump laser for C-band Raman amplifiers
*Started sample shipments of a pump laser for Raman amplifiers that applies this technology to realize an industry leading optical output of 700mW
*By increasing the output of the pump laser, a key device for Raman amplifiers, contributes to the development of large capacity communications networks with a transmission speed exceeding 800Gbps and even reaching 1.6Tbps
Background
Directed at increasing the capacity of medium to long distance optical communication networks, which is essential to the practical implementation of 5G, technology development is progressing toward increasing the transmission speed from the current 100-400Gbs to 800Gbps and even 1.6 Tbps in the future. These faster transmission speeds require high performance Raman amplifiers to supplement OSNR (Optical Signal to Noise Ratio, note 1) degradation of the signal receiving side.
In 1989,
Details
Utilizing the InP (Indium Phosphide, note 3) semiconductor chip technology and optical module assembly technology accumulated over the years, we achieved an industry leading 800mW output with a pump laser for Raman amplifiers (Fig. 2). In this new development, we increased the efficiency by optimizing the cavity length of the semiconductor laser chip and structure of the active layer and also realized high optical coupling efficiency to the optical fiber, which is an important technology in the laser pump assembly. Utilizing this technology, we developed the FRL1441 Series pump laser for Raman amplifiers that has an industry leading optical output of 700mW and started sample shipments of this pump laser in August of this year.
This new development is expected to improve OSNR in long distance transmission following further increases to transmission speed and data volume, as well as lead to smaller Raman amplifiers and lower pump laser power consumption (by 37% compared to existing
The current development results will be announced on
As a leading company in the laser business,
Main characteristics Model FRL1441 Series Optical output (mW) 800 700 600 500 Power consumption (W) Typ.16 Max.14 Max.10 Max.6 Drive conditions Ts=35°C?Tc=70°C(EOL) Bandwidth C-band
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
(note 2)Appl. Phys. Lett. 54, 295 (1989), 295 Efficient Er3+-doped optical fiber amplifier pumped by a 1.48 um InGaAsP laser diode, IEICE PIONEERS WEBINAR series no.1, EDFA "A Long Adventuresome Trip" by
(note 3)InP (Indium Phosphide): A III-V compound semiconductor that is used in the manufacture of laser diode chips and high speed transistors
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