Vishay Intertechnology Launches Asymmetric Dual TrenchFET® Gen IV MOSFET in Compact PowerPAIR® 3 mm by 3 mm Package

Next-Generation Device Increases Efficiency With 57 % Lower Maximum RDS(ON)


MALVERN, Pa. - Jan. 16, 2014 - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 30 V asymmetric dual TrenchFET® power MOSFET in the PowerPAIR® 3 mm by 3 mm package utilizing TrenchFET Gen IV technology. Providing 57 % lower on-resistance, up to 25 % higher power density, and 5 % higher efficiency than previous-generation devices in this package size, the Vishay Siliconix SiZ340DT helps to save space and simplify the design of highly efficient synchronous buck converters by combining a high-side and low-side MOSFET in one compact package.

The TrenchFET Gen IV technology of the SiZ340DT utilizes a very high-density design to reduce on-resistance without significantly increasing the gate charge, minimizing conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1 m

© Publicnow - 2014