Transphorm : Powerics to Preview GaN Power Charger with Transphorm FETs at VLSID 2023
January 11, 2023 at 12:37 pm
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MEDIA ADVISORY
Who:
Powerics, a Hyderabad-based stealth mode startup developing one of India's first GaN powered chargers, and Transphorm, a pioneer in and global supplier of high reliability, high performance GaN power conversion products.
What:
Preview of Powerics' GaN-based power charger-a 65W USB-PD charger with two output ports (Type C & Type A) delivering a power density of 16.84 Watts per cubic inch.
The charger uses Transphorm's TP65H300G4LSG device, a 650V 240 mꭥ SuperGaN® FET in a PQFN88package, and Silanna Semiconductor's SZ1130 ACF controller. Notably, Powerics' product developmentpartner MosChip Technologies managed development of the PCBA and enclosure design (including mechanical accessories) as well as design validation and certification.
Why:
Gallium Nitride (GaN) is the wide bandgap technology powering a broad spectrum of next generation power conversion systems. Specifically, Transphorm's GaN platform is known to deliver up to 99% power efficiency, with 50% higher power density and up to 20% lower overall power system costs when compared to alternative silicon-based solutions. As a result, a GaN-based power IC serves as a highly attractive power conversion solution for mobile fast chargers and other consumer electronics seeking reliable, fast, and powerful performance in small packages.
When:
January 10 - 12, 2023
Where:
International VLSI Design & Embedded Systems Conference (VLSID 2023)
Novotel, HICC, Hyderabad
Hall 4, Block B, Booth 54 (Transphorm)
About Transphorm
Transphorm, Inc. (Nasdaq: TGAN), a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry's first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company's vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm's innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
Transphorm Technology Inc. published this content on 11 January 2023 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 11 January 2023 17:36:01 UTC.
Transphorm Technology, Inc. is a global semiconductor company. The Company develops gallium nitride (GaN) products for high-voltage power conversion applications. The Company's Gen IV platform delivers benefits both in assembly and applications, which is the catalyst for the SuperGaN brand. The Company's GaN technology benefits various markets. The highest adoption rates are projected for the various application areas, including power supplies in infrastructure and information technology (IT); adapters, gaming power supplies in consumer and computing; battery chargers, uninterruptible power supply (UPS) in broad industry; electric vehicles, charging in automotive; and mobile adapters, radio frequency (RF) material in fifth generation (5G). Its GaN solutions support a range of power levels across the range of applications. Its device portfolio includes 650 V and 900 V FETs, with 1200 V FETs in development.
TRANSPHORM, INC. 
