Hamamatsu, Japan - January 12, 2017 - Hamamatsu Photonics K.K. has developed an uncooled InAsSb (indium arsenide antimonide) photovoltaic detector that offers high-speed and high-sensitivity detection of infrared light in the 3 to 11 micron wavelength range. This new device (part number: P13894-011MA) extends the upper limit of sensitivity of Hamamatsu's InAsSb detectors from 8 microns to 11 microns, which will enable users to measure molecules that absorb longer wavelengths of light and thus analyze more compounds with a single device.
The P13894-011MA will be available to manufacturers of environmental monitoring systems from January 16, 2017. From January 31 to February 2, the P13894-011MA will be on display as part of Hamamatsu's exhibit at the SPIE Photonics West conference in San Francisco, California.
P13894 series InAsSb photovoltaic detector
Hamamatsu Photonics KK published this content on 12 January 2017 and is solely responsible for the information contained herein.
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