Yuri Erokhin
Career history of Yuri Erokhin
Former positions of Yuri Erokhin
| Companies | Position | Start | End |
|---|---|---|---|
| IPG PHOTONICS CORPORATION | Corporate Officer/Principal | 2013-02-28 | - |
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Corporate Officer/Principal | - | - |
Training of Yuri Erokhin
| Moscow Institute of Physics & Technology | Graduate Degree |
| Russian Academy of Sciences | Doctorate Degree |
Statistics
International
| United States | 3 |
| Russia | 3 |
Operational
| Corporate Officer/Principal | 2 |
| Graduate Degree | 1 |
| Doctorate Degree | 1 |
Sectoral
| Electronic Technology | 3 |
| Consumer Services | 3 |
Positions held
Active
Inactive
Listed companies
Private companies
Linked companies
| Listed companies | 1 |
|---|---|
| IPG PHOTONICS CORPORATION | Electronic Technology |
| Private companies | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
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