Weebit Nano Limited announced that together with its development partner CEA-Leti, it has demonstrated its first operational crossbar arrays, a key milestone on the Company's path to creating discrete (stand-alone) non-volatile memory (NVM) chips. The 1T1R (one transistor one resistor) architecture used in embedded ReRAM arrays is not sufficient to support the large arrays of memory cells needed in discrete memory chips. For this reason, Weebit's crossbar arrays were developed using a 1S1R (one selector one resistor) architecture that enables the high density needed for discrete chips.

Such an architecture also allows Weebit's arrays to be stacked in 3D layers so they can deliver even higher densities. Weebit's 1S1R crossbar ReRAM architecture has potential applications in storage class memory, persistent memory and as a NOR flash replacement. It is also ideal for AI architectures such as in-memory computing and neuromorphic computing.