MagnaChip Semiconductor Corporation announced it now offers a multi-level thick IMD (Inter-Metal Dielectric) process for a capacitor with ultra-high breakdown voltage. This capacitor is useful for the digital isolation and capacitive coupling in electronic circuits. MagnaChip's multi-level thick IMD process consists of back-end-of-line process module including IMD with a thickness from 5um to 6um per metal layer. Depending on the breakdown and capacitance requirements, the thick IMD can be stacked together up to three layers to allow the design of the metal-insulator-metal capacitor with insulator thickness in the range of 5um to 20um. This capacitor will withstand from about 4 kilo-volts to 15 kilo-volts before breakdown, which is suitable for capacitive isolation of a digital signal from ultra-high voltage noise from outside environments. The multi-level thick IMD process module, which has already passed the reliability requirements for automotive AEC Q-100, is now integrated into MagnaChip's 0.18um BCD and Mixed Signal process technologies. The Process Design Kit is available to support on-chip integration.